AlGaN-based UV photodetectors

被引：157

作者：

Monroy, E

Calle, F

Pau, JL

Muñoz, E

Omnès, F

Beaumont, B

Gibart, P

机构：

[1] Univ Politecn Madrid, ETSI Telecomun, Dpto Ingn Elect, E-28040 Madrid, Spain

[2] CRHEA, CNRS, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

关键词：

nitrides; semiconducting III-V materials; detectors;

D O I：

10.1016/S0022-0248(01)01305-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxGa1-xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal-semiconductor-metal photodiodes, p-n junction photodetectors and photo transistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date. (C) 2001 Elsevier Science B.V. All rights reserved.

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收藏

页码：537 / 543

页数：7

相关论文

共 37 条

[1] GaN avalanche photodiodes [J].

Carrano, JC ;

Lambert, DJH ;

Eiting, CJ ;

Collins, CJ ;

Li, T ;

Wang, S ;

Yang, B ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :924-926

[2] Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN [J].

Carrano, JC ;

Li, T ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6148-6160

[3] Very high-speed ultraviolet photodetectors fabricated on GaN [J].

Carrano, JC ;

Li, T ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :325-333

[4] Persistent photoconductivity in n-type GaN [J].

Chen, HM ;

Chen, YF ;

Lee, MC ;

Feng, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :899-901

[5] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[6] Semiconductor near-ultraviolet photoelectronics [J].

Goldberg, YA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (07) :R41-R60

[7] GATED PHOTODETECTOR BASED ON GAN/ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR [J].

KHAN, MA ;

SHUR, MS ;

CHEN, Q ;

KUZNIA, JN ;

SUN, CJ .

ELECTRONICS LETTERS, 1995, 31 (05) :398-400

[8] Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode [J].

Li, T ;

Beck, AL ;

Collins, C ;

Dupuis, RD ;

Campbell, JC ;

Carrano, JC ;

Schurman, MJ ;

Ferguson, IA .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2421-2423

[9] 8x8 GaN Schottky barrier photodiode array for visible-blind imaging [J].

Lim, BW ;

Gangopadhyay, S ;

Yang, JW ;

Osinsky, A ;

Chen, Q ;

Anwar, MZ ;

Khan, MA .

ELECTRONICS LETTERS, 1997, 33 (07) :633-634

[10] High responsitivity intrinsic photoconductors based on AlxGa1-xN [J].

Lim, BW ;

Chen, QC ;

Yang, JY ;

Khan, MA .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3761-3762

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