GaNHFET technology for RF applications

被引：11

作者：

Nguyen, C ^{[1
]}

Micovic, M ^{[1
]}

Wong, D ^{[1
]}

Kurdoghlian, A ^{[1
]}

Hashimoto, P ^{[1
]}

Janke, P ^{[1
]}

McCray, L ^{[1
]}

Moon, J ^{[1
]}

机构：

[1] Hughes Res Labs, LLC, Malibu, CA 90265 USA

来源：

GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年

关键词：

D O I：

10.1109/GAAS.2000.906263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.

引用

收藏

页码：11 / 14

页数：4

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