Robust low microwave noise GaN MODFETs with 0.60dB noise figure at 10GHz

被引：42

作者：

Nguyen, NX ^{[1
]}

Micovic, M ^{[1
]}

Wong, WS ^{[1
]}

Hashimoto, P ^{[1
]}

Janke, P ^{[1
]}

Harvey, D ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] LLC, HRL Labs, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 05期

关键词：

D O I：

10.1049/el:20000353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A demonstration of the high performance micron-ave-noise characteristics of robust 0.15 mu m gate-lengh GaN/AlGaN MODFETs is reported. Very low noise figures were achieved through the optimisation of materials grow th and device fabrication processes. A minimum noise figure of 0.60dB at 10GHz has been achieved with a gate-drain breakdown voltage of 68V. These excellent combined characteristics clearly demonstrate the potential of GaN MODFETS for robust low-noise amplifiers.

引用

页码：469 / 471

页数：3

共 5 条

[1] GaN MODFET microwave power technology for future generation radar and communications systems [J].