Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride

被引：47

作者：

Burger, A ^{[1
]}

Groza, M

Cui, Y

Hillman, D

Brewer, E

Bilikiss, A

Wright, GW

Li, L

Fu, F

James, RB

机构：

[1] Fisk Univ, Nashville, TN 37208 USA

[2] Yinnel Tech Inc, South Bend, IN 46619 USA

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 07期

关键词：

CdZnTe room-temperature detector; photoconductivity; Pockels effect; internal electric-field distribution;

D O I：

10.1007/s11664-003-0066-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The need for large, room-temperature gamma-ray spectrometers to be fabricated from a single crystalline section of a cadmium zinc telluride (CZT) boule was recently met by progress in crystal growth of high-resistivity material. The characterization of such large crystals provides us with an opportunity to better understand the detector physics and apply characterization techniques, which were difficult to implement and analyze on smaller crystals. In this study, metal-semiconductor-metal, planar-CZT detectors were fabricated from large (approximately 9 x 9 x 6 mm(3)), CZT single crystals. We have investigated the relationship between the results of the electric-field mapping via Pockels effect, photoconductivity data, and detector performance. Changes in the surface recombination and device characteristics showing departure from symmetry are caused and revealed by variations in the surface preparation.

引用

页码：756 / 760

页数：5

共 15 条

[1] Investigation of electrical contacts for Cd1-xZnxTe nuclear radiation detectors [J].