Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments

被引：33

作者：

Belas, E

Grill, R

Franc, J

Toth, A

Hoschl, P

Sitter, H

Moravec, P

机构：

[1] HUNGARIAN ACAD SCI,TECH PHYS RES INST,BUDAPEST,HUNGARY

[2] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00696-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of temperature on processes occurring during and after ion beam milling with low energy Ar ions (500-1000 eV) on Hg1-xCdxTe samples (x approximate to 0.2) was demonstrated. Nearly exponential dependence of the depth of the p-n junction created during ion milling on temperature in the range 77-300 K was found, Theoretical fits based on the presented model yield a migration energy of the mercury interstitials of E(M) = 120 +/- 30 meV.

引用

页码：1117 / 1122

页数：6

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