Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots

被引：5

作者：

Heo, DC ^{[1
]}

Dong, SJ

Choi, WJ

Lee, JI

Jeong, JC

Han, IK

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

[3] Korea Univ, Dept Radio Engn, Seoul 136701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 08期

关键词：

superluminescent diodes; quantum dot; short-period superlattice; light emitting diodes;

D O I：

10.1143/JJAP.42.5133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 x 10(10) cm(-2). The output power and spectral width of the SLD using these three-stacked QDs are 0.9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.

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收藏

页码：5133 / 5134

页数：2

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