Controlled quantum confinement potentials in self-formed InGaAs quantum dots grown by atomic layer epitaxy technique

被引：26

作者：

Mukai, K

Ohtsuka, N

Sugawara, M

机构：

[1] Fujitsu Lab Ltd, Atsugi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 2B期

关键词：

quantum dots; confinement potential; self-formed; InGaAs; atomic layer epitaxy; diamagnetic shift; control; size;

D O I：

10.1143/JJAP.35.L262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present work deals with the control of quantum confinement potential in self-formed In0.5Ga0.5As/GaAs quantum dots. The dots were grown by alternate supply of (InAs)/(GaAs) precursors using atomic layer epitaxy technique, As the number of supply cycles increased from 9 to 30, dot size observed by transmission electron microscopy increased from 20 to 32 nm in diameter and photoluminescence (PL) spectra shifted to lower energy. Measuring PL spectra under a magnetic field, we found that the smaller the dots, the smaller the diamagnetic shifts. These results indicate that the quantum confinement potential was controlled in our growth technique.

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页码：L262 / L265

页数：4

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