Long term operation of 4.5kV PiN and 2.5kV JBS diodes

被引：239

作者：

Lendenmann, H ^{[1
]}

Dahlquist, F ^{[1
]}

Johansson, N ^{[1
]}

Söderholm, R ^{[1
]}

Nilsson, PA ^{[1
]}

Bergman, JP ^{[1
]}

Skytt, P ^{[1
]}

机构：

[1] ABB Corp Res, SE-72178 Vasteras, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

forward degradation of SiC diodes; high voltage; large area diodes; reliability;

D O I：

10.4028/www.scientific.net/MSF.353-356.727

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large area SiC diodes (20mm(2) and 40mm(2)) for high power applications were manufactured on selected defect free areas of 4H Epi wafers. The forward and reverse characteristics of these 4.5kV PiN and 2.5kV JBS diodes are analyzed. Various device nonidealities are discussed and compared to known crystal imperfections. Large PiN diodes were parallel connected together with silicon IGBT switches using conventional press-pack technology. Dynamic switching up to 1250V and 400A nominal current is reported. Long term data for continuos switching revealed a new drift phenomena of the forward voltage drop of bipolar diodes. However, long term blocking tests confirmed reliable reverse characteristics.

引用

页码：727 / 730

页数：4

共 6 条

[1]

CARTER CH, 2000, UPD2000, P3

[2]

ELLISON A, 1999, THESIS LINKOPING U, P153

[3] Growth and characterisation of SiC power device material [J].

Kordina, O ;

Henry, A ;

Janzen, E ;

Carter, CH .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :97-102

[4] Deep level centers in silicon carbide: A review [J].

Lebedev, AA .

SEMICONDUCTORS, 1999, 33 (02) :107-130

[5] Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p+n junction diodes -: Part I:: DC properties [J].

Neudeck, PG ;

Huang, W ;

Dudley, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :478-484

[6] SiC power devices for high voltage applications [J].

Rottner, K ;

Frischholz, M ;

Myrtveit, T ;

Mou, D ;

Nordgren, K ;

Henry, A ;

Hallin, C ;

Gustafsson, U ;

Schöner, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :330-338

← 1 →