Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode

被引：46

作者：

Choi, Ji-Hyuk ^{[1
]}

Das, Sachindra Nath ^{[1
]}

Moon, Kyeong-Ju ^{[1
]}

Kar, Jyoti Prakash ^{[1
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 12期

关键词：

Nanostructures; Heterojunction diode; Nanofabrication;

D O I：

10.1016/j.sse.2010.07.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays Optical studies revealed that the Si nanowire surface has porous silicon like structure The junction properties were evaluated by measuring I-V and C-V characteristics I-V characteristics exhibited well defined rectifying behavior with a turn on voltage of 2 26 V and ideality factor of 45 (C) 2010 Elsevier Ltd All rights reserved

引用

页码：1582 / 1585

页数：4

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