Transition from three- to two-dimensional growth in strained SrRuO3 films on SrTiO3(001)

被引:37
作者
Sánchez, F
García-Cuenca, MV
Ferrater, C
Varela, M
Herranz, G
Martínez, B
Fontcuberta, J
机构
[1] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain
[2] UAB, Inst Ciencia Mat Barcelona, CSIC, Bellaterra 08913, Catalunya, Spain
关键词
D O I
10.1063/1.1599040
中图分类号
O59 [应用物理学];
学科分类号
摘要
The morphology of strained SrRuO3 films grown on SrTiO3(001) has been investigated as a function of thickness. A transition of growth mode has been observed. At the early stages, there is a fingerlike structure originated by three-dimensional (3D) islands that nucleated along the substrate steps. Afterward, adatoms stick preferentially in the valleys of the structure and the films become progressively smoother. At a thickness above 10-20 nm, the films are extremely flat and have a self-organized structure of terraces and steps, with the growth proceeding mainly by a step flow (two-dimensional) mechanism. Relevance on film properties and possible use of the initial, nanometric, 3D structures are discussed. (C) 2003 American Institute of Physics.
引用
收藏
页码:902 / 904
页数:3
相关论文
共 16 条
[11]   Domain structure of epitaxial SrRuO3 thin films on miscut (001) SrTiO3 substrates [J].
Jiang, JC ;
Tian, W ;
Pan, XQ ;
Gan, Q ;
Eom, CB .
APPLIED PHYSICS LETTERS, 1998, 72 (23) :2963-2965
[12]   Magnetic resistivity in SrRuO3 and the ferromagnetic phase transition -: art. no. 054435 [J].
Kats, Y ;
Klein, L ;
Reiner, JW ;
Geballe, TH ;
Beasley, MR ;
Kapitulnik, A .
PHYSICAL REVIEW B, 2001, 63 (05)
[13]   Origin of preferential orthorhombic twinning in SrRuO3 epitaxial thin firms [J].
Maria, JP ;
McKinstry, HL ;
Trolier-McKinstry, S .
APPLIED PHYSICS LETTERS, 2000, 76 (23) :3382-3384
[14]   Surfaces: a playground for physics with broken symmetry in reduced dimensionality [J].
Plummer, EW ;
Ismail ;
Matzdorf, R ;
Melechko, AV ;
Pierce, JP ;
Zhang, JD .
SURFACE SCIENCE, 2002, 500 (1-3) :1-27
[15]   Growth mechanisms of epitaxial metallic oxide SrRuO3 thin films studied by scanning tunneling microscopy [J].
Rao, RA ;
Gan, Q ;
Eom, CB .
APPLIED PHYSICS LETTERS, 1997, 71 (09) :1171-1173
[16]   Self-organization of nanostructures in semiconductor heteroepitaxy [J].
Teichert, C .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2002, 365 (5-6) :335-432