The growth of freestanding single carbon nanotube arrays

被引:28
作者
Kim, DH [1 ]
Cho, DS
Jang, HS
Kim, CD
Lee, HR
机构
[1] Kyungpook Natl Univ, Dept Phys, Nanophys & Technol Lab, Taegu 702701, South Korea
[2] Kyungpook Natl Univ, NPTL, Dept Nanosci & Technol, Taegu 702701, South Korea
关键词
D O I
10.1088/0957-4484/14/12/007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Regular arrays of freestanding single carbon nanotubes (CNTs) were prepared on Ni dot arrays by dc plasma-enhanced chemical vapour deposition. The size of the Ni dot was reduced for single CNT growth by means of conventional photolithography and a lateral wet-etch process. The vertical alignment of a single CNT was directly dependent on the location of the catalyst metals. Using this method, well-separated and well-defined regular arrays of freestanding CNTs can be fabricated and the process can be scaled up at a lower cost than electron beam lithography, which is encouraging for applications in field emitters and nanoelectrodes.
引用
收藏
页码:1269 / 1271
页数:3
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