Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors

被引：210

作者：

Jeong, Jong Han ^{[1
]}

Yang, Hui Won ^{[1
]}

Park, Jin-Seong ^{[1
]}

Jeong, Jae Kyeong ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

Song, Jaewon ^{[2
,3
]}

Hwang, Cheol Seong ^{[2
,3
]}

机构：

[1] Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449902, Gyeonggi Do, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, Interuniv Semicond, Res Ctr, Seoul 151744, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 06期

关键词：

D O I：

10.1149/1.2903209

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure: at a pressure of 1 mTorr, the field-effect mobility (mu(FE)) and subthreshold gate swing (S) of the a-IGZO thin-film transistors were dramatically improved to 21.8 cm(2)/Vs and 0.17 V/decade, respectively, compared to those (11.4 cm(2)/Vs and 0.87 V/decade) of the reference transistors prepared at 5 mTorr. This enhancement in the subthreshold characteristics was attributed to the reduction of the bulk defects of the a-IGZO channel, which might result from the greater densification of the a-IGZO films at the lower deposition pressure. (c) 2008 The Electrochemical Society.

引用

页码：H157 / H159

页数：3

共 11 条

[1] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[2] Density, sp3 fraction, and cross-sectional structure of amorphous carbon films determined by x-ray reflectivity and electron energy-loss spectroscopy [J].

Ferrari, AC ;

Li Bassi, A ;

Tanner, BK ;

Stolojan, V ;

Yuan, J ;

Brown, LM ;

Rodil, SE ;

Kleinsorge, B ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 62 (16) :11089-11103

[3] High field-effect mobility zinc oxide thin film transistors produced at room temperature [J].

Fortunato, E ;

Pimentel, A ;

Pereira, L ;

Gonçalves, A ;

Lavareda, G ;

Aguas, H ;

Ferreira, I ;

Carvalho, CN ;

Martins, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :806-809

[4] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel [J].

Jeong, Jae Kyeong ;

Jeong, Jong Han ;

Yang, Hui Won ;

Park, Jin-Seong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[5]

Kagan C. Y., 2003, THIN FILM TRANSISTOR, P87

[6] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[7] Transport in high mobility amorphous wide band gap indium zinc oxide films [J].

Martins, R ;

Barquinha, P ;

Pimentel, A ;

Pereira, L ;

Fortunato, E .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (09) :R95-R97

[8] Special issue on flexible electronics technology, part 1: Systems and applications [J].

Nathan, A ;

Chalamala, BR .

PROCEEDINGS OF THE IEEE, 2005, 93 (07) :1235-1238

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment [J].

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Mo, Yeon-Gon ;

Kim, Hye Dong ;

Kim, Sun-Il .

APPLIED PHYSICS LETTERS, 2007, 90 (26)

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