Epitaxial growth of II-VI semiconductor CdTe on a layered material NbSe2

The MBE growth of II-VI semiconductor CdTe on a layered material NbSe2 was studied. The epitaxial growth of a CdTe (1 1 1) layer was achieved on the NbSe2 (0 0 0 1) surface in spite of a lattice mismatch ratio as large as 33 % between them. In-situ RHEED observation showed that CdTe was grown in the two-dimensional growth mode from the very beginning of the deposition on the NbSe2 surface. The X-ray diffraction measurements revealed the in-plane orientational relation of CdTe[(1) over bar (1) over bar 2] parallel to NbSe2[1 0 (1) over bar 0] or [(1) over bar 0 1 0]. Both these orientational relations are such that the hexagonal arrangement of atoms in the CdTe (I 1 1) layer is in the same azimuthal direction as that of Se atoms in the NbSe2 (0 0 0 1) surface. The photoluminescence measurements demonstrated a good optical quality with an intense excitonic luminescence. (C) 2003 Elsevier B.V. All rights reserved.