Effects of substrate temperature upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE

被引：14

作者：

Hayashida, K ^{[1
]}

Nishio, M ^{[1
]}

Harada, H ^{[1
]}

Furukawa, S ^{[1
]}

Guo, QX ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

ZnTe; photo-assisted MOVPE; photoluminescence; substrate temperature;

D O I：

10.1016/S0022-0248(00)00722-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effects of substrate temperature upon the growth rate and photoluminescence property of ZnTe layers grown on the (1 0 0) ZnTe substrate by atmospheric pressure metalorganic vapor-phase epitaxy with and without light illumination have been investigated. It has been demonstrated that photo-assisted growth enlarges substrate temperature range for achieving ZnTe layer of good quality compared with thermal growth. ZnTe epitaxial layers of high quality are obtainable under the growth conditions close to the mass transport to surface kinetic transition region. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：404 / 409

页数：6

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