SURFACE PHOTOCHEMICAL-REACTIONS FOR ALKYL GROUP ELIMINATION FROM PRECURSORS IN OMVPE

被引：25

作者：

FUJITA, S

MARUO, S

ISHIO, H

MURAWALA, PA

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90534-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photo-irradiation, under conditions where direct photo-decomposition or photo-excitation of source precursors does not occur, can enhance alkyl group elimination from precursors in organometallic vapor phase epitaxy (OMVPE). For II-VI semiconductors such as ZnSe and ZnS, a significant increase in the growth rate with irradiation has been explained in terms of photocatalysis. For III-V semiconductors such as GaAs, the optical and electrical properties were improved. This may be attributed to a reduction in carbon contamination as found by secondary ion mass spectroscopy (SIMS). This phenomenon is promising not only for low temperature growth but also for the development of new group-V precursors for use as alternatives to the toxic hydrides.

引用

页码：644 / 648

页数：5

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