Growth of high-quality single-wall carbon nanotubes without amorphous carbon formation

被引:81
作者
Lacerda, RG
Teh, AS
Yang, MH
Teo, KBK
Rupesinghe, NL
Dalal, SH
Koziol, KKK
Roy, D
Amaratunga, GAJ
Milne, WI
Chhowalla, M
Hasko, DG
Wyczisk, F
Legagneux, P
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Rutgers State Univ, Piscataway, NJ 08854 USA
[3] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[4] Thales Res & Technol France, F-91404 Orsay, France
关键词
D O I
10.1063/1.1639509
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an alternative way of preparing high-quality single-wall carbon nanotubes (SWCNTs). Using a triple-layer thin film of Al/Fe/Mo (with Fe as a catalyst) on an oxidized Si substrate, the sample is exposed to a single short burst (5 s) of acetylene at 1000 degreesC. This produced a high yield of very well graphitized SWCNTs, as confirmed by transmission electron microscopy and Raman spectroscopy. We believe that the high temperature is responsible for the high crystallinity/straightness of the nanotubes, and the rapid growth process allows us to achieve a clean amorphous carbon (a-C) free deposition which is important for SWCNT device fabrication. The absence of a-C is confirmed by Auger electron spectroscopy, Raman spectroscopy, and electrical measurements. (C) 2004 American Institute of Physics.
引用
收藏
页码:269 / 271
页数:3
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