Polyacene capacitors

被引:43
作者
Yata, S
Okamoto, E
Satake, H
Kubota, H
Fujii, M
Taguchi, T
Kinoshita, H
机构
[1] Development Laboratories, Kanebo Ltd., Osaka 534, Miyakojima-ku
关键词
polyacene; semiconductors; conductive polymers;
D O I
10.1016/S0378-7753(96)80012-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We fabricated two types of polyacene capacitor with extremely stable polyacenic semiconductor (PAS) as the positive and negative electrodes. The first one is a coin-type PAS capacitor (six different sizes), which possesses large capacity with high reliability. Its capacity is much larger than that of the conventional electric double-layer capacitor which uses activated carbon as electrode. PAS capacitor can maintain more than 70% of the initial capacity even after 100 000 cycles. Moreover, this capacitor can be charged and discharged in a few minutes as well as at low rate. The second one is a cylinder-type PAS capacitor (diameter: 18 mm, height: 65 mm) which shows high capacity of 100 F and can discharge at the extremely high rate of 80 C. The coin-type PAS capacitor is currently used for memory back-up of electrical and communication equipment, and the cylinder-type is considered to be useful as power back-up for starting drive parts of electric equipment which needs high power density.
引用
收藏
页码:207 / 212
页数:6
相关论文
共 14 条
[1]  
NISHINO A, 1993, DENCHI GIJUTSU, V5, P23
[2]  
NISHINO A, 1993, P S NEW SEAL RECH BA, P1
[3]  
TANAKA K, 1984, SYNTHETIC MET, V9, P41, DOI 10.1016/0379-6779(84)90040-7
[4]   X-RAY-DIFFRACTION STUDIES OF PRISTINE AND HEAVILY-DOPED POLYACENIC MATERIALS [J].
TANAKA, K ;
UEDA, M ;
KOIKE, T ;
YAMABE, T ;
YATA, S .
SYNTHETIC METALS, 1988, 25 (03) :265-275
[5]   STRUCTURE AND PROPERTIES OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR-MATERIALS BEYOND C6LI STAGE [J].
YATA, S ;
KINOSHITA, H ;
KOMORI, M ;
ANDO, N ;
KASHIWAMURA, T ;
HARADA, T ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1994, 62 (02) :153-158
[6]   POLYMER BATTERY EMPLOYING POLYACENIC SEMICONDUCTOR [J].
YATA, S ;
HATO, Y ;
SAKURAI, K ;
OSAKI, T ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1987, 18 (1-3) :645-648
[7]   STUDIES OF POROUS POLYACENIC SEMICONDUCTORS TOWARD APPLICATION .2. FUNDAMENTAL ELECTROCHEMICAL PROPERTIES [J].
YATA, S ;
OSAKI, T ;
HATO, Y ;
TAKEHARA, N ;
KINOSHITA, H ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1990, 38 (02) :177-184
[8]   STUDIES OF POROUS POLYACENIC SEMICONDUCTORS TOWARD APPLICATION .3. CHARACTERISTICS OF PRACTICAL BATTERIES EMPLOYING POLYACENIC SEMICONDUCTIVE MATERIALS AS ELECTRODES [J].
YATA, S ;
SAKURAI, K ;
OSAKI, T ;
INOUE, Y ;
YAMAGUCHI, K ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1990, 38 (02) :185-193
[9]   STUDIES OF POROUS POLYACENIC SEMICONDUCTORS TOWARD APPLICATION .1. PREPARATION AND STRUCTURAL-ANALYSIS [J].
YATA, S ;
HATO, Y ;
SAKURAI, K ;
SATAKE, H ;
MUKAI, K ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1990, 38 (02) :169-175
[10]   STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS) [J].
YATA, S ;
KINOSHITA, H ;
KOMORI, M ;
ANDO, N ;
KASHIWAMURA, T ;
HARADA, T ;
TANAKA, K ;
YAMABE, T .
SYNTHETIC METALS, 1993, 55 (01) :388-393