Modelling study of MQW LED operation

被引:48
作者
Mymrin, VF [1 ]
Bulashevich, KA [1 ]
Podolskaya, NI [1 ]
Zhmakin, IA [1 ]
Karpov, SY [1 ]
Makarov, YN [1 ]
机构
[1] Soft Impact Ltd, St Petersburg 194156, Russia
来源
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期
关键词
D O I
10.1002/pssc.200461289
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Operation of multiple-quantum-well (MQW) light emitting diode (LED) heterostructures with selective barrier doping is studied by modelling. The carrier confinement in the MQW LEDs and the effects of barrier doping on the emission efficiency and wavelength stability is examined in detail. The simulations predict improvement of the LED performance by heavy n-doping of the MWQ barriers. The theoretical predictions are compared with available experimental data. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2928 / 2931
页数:4
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