Carrier injection and light emission in visible and UV nitride LEDs by modeling

被引：18

作者：

Karpov, SY

Bulashevich, KA

Zhmakin, IA

Nestoklon, MO

Mymrin, VF

Makarov, YN

机构：

[1] Soft Impact Ltd, St Petersburg 194156, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Semicond Technol Res Inc, Richmond, VA 23255 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 12期

关键词：

D O I：

10.1002/pssb.200405023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polarization effects on carrier injection and light emission are considered by modeling with reference to single-quantum-well blue light emitting diode heterostructures of either Ga- or N-polarity. The model accounts for specific features of nitride semiconductors, spontaneous and piezo-polarization, strong nonradiative recombination on threading dislocation cores, complex valence band structure, etc., and allows detailed analysis of the device operation. The modeling results are compared with available observations. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2668 / 2671

页数：4

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