Plasma preparation on indium-tin-oxide anode surface for organic light emitting diodes

被引:57
作者
Lu, HT [1 ]
Yokoyama, M [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
关键词
surface morphology; vacuum deposition; organic light emitting diodes;
D O I
10.1016/j.jcrysgro.2003.08.032
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A simple bilayer structure of organic light emitting diode (OLED) was used to study the characteristics of various anode preparations. Systematic investigation of indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The. ITO surface was treated by Ar or O-2 plasma with different RF power, chamber pressure and exposure time. Atomic force microscopy was used in measuring the surface morphology and roughness analyses. Sheet resistance of ITO anodes reduces to less than 7 Omega/square and surface roughness of ITO anode decreases more than 20%. Hence, the electric characteristics of OLED were improved. The operating voltage of OLED devices with Ar or O-2 plasma treated anodes decreased from 7.5 to 6.5 V and 6.0 V, respectively. We also show the presence of less dark spots in the OLEDs with plasma-treated ITO anode. As a result, the stability and lifetime of OLEDs can be improved obviously. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:186 / 190
页数:5
相关论文
共 5 条
[1]   Surface treatment of indium-tin-oxide substrates and its effects on initial nucleation processes of diamine films [J].
Fujita, S ;
Sakamoto, T ;
Ueda, K ;
Ohta, K ;
Fujita, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :350-353
[2]   Improved operational stability of polyfluorene-based organic light-emitting diodes with plasma-treated indium-tin-oxide anodes [J].
Kim, JS ;
Friend, RH ;
Cacialli, F .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3084-3086
[3]   Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium-tin-oxide anodes [J].
Kim, JS ;
Cacialli, F ;
Cola, A ;
Gigli, G ;
Cingolani, R .
APPLIED PHYSICS LETTERS, 1999, 75 (01) :19-21
[4]   Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode [J].
Steuber, F ;
Staudigel, J ;
Stössel, M ;
Simmerer, J ;
Winnacker, A .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3558-3560
[5]   Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices [J].
Wu, CC ;
Wu, CI ;
Sturm, JC ;
Kahn, A .
APPLIED PHYSICS LETTERS, 1997, 70 (11) :1348-1350