Monolithic integration of a waveguide optical isolator with a distributed feedback laser diode in the 1.5-μm wavelength range

被引：32

作者：

Shimizu, Hiromasa ^{[1
]}

Nakano, Yoshiaki ^{[2
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 21-24期

关键词：

distributed feedback laser diode (DFB LD); Fe; InGaAsP; nonreciprocal loss; photonic integrated circuit; semiconductor optical amplifier (SOA); waveguide optical isolator;

D O I：

10.1109/LPT.2007.909697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present first monolithic integration of a waveguide optical isolator with a distributed feedback laser diode (DFB LD) in the 1.5-mu m wavelength range. The integrated devices are composed of 0.25-mm-long index-coupled DFB LDs and 0.75-mm-long semiconductor active waveguide optical isolators. The semiconductor active waveguide optical isolators are based on the nonreciprocal loss in the semiconductor optical amplifier (SOA) waveguides with ferromagnetic metals (Fe). The fabrication process consists of two steps of metal-organic vapor phase epitaxy to grow the DFB LD/SOA layer structures, one dry-etching process for the waveguide stripe formation, and three steps of electron-beam evaporation for the electrodes and ferromagnetic metals deposition. They showed single-mode emission at 1543.8 nm and 4-dB optical isolation under a magnetic field of 0.1 T.

引用

页码：1973 / 1975

页数：3

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