Photon emission excited in paraffin-passivated GaAs surfaces by scanning tunneling microscopy

被引：2

作者：

Carladous, A ^{[1
]}

Coratger, R ^{[1
]}

Seine, G ^{[1
]}

Ajustron, F ^{[1
]}

Beauvillain, J ^{[1
]}

机构：

[1] CNRS, CEMES, F-31055 Toulouse, France

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.368107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photon emission from GaAs surfaces induced by scanning tunneling microscopy has been detected in air. Surfaces have been protected from oxidation by a thin film of paraffin oil. Tunneling topography, related photon mapping, and the corresponding emission spectrum have been simultaneously acquired. Also, the influence of applied bias voltage on the emission yield has been studied. The results allow this photon emission to be ascribed to radiative recombinations in the semiconductor bulk. An irreversible decay of emission yield at high negative sample voltages (-3 V) is also observed. (C) 1998 American Institute of Physics. [S0021-8979(98)05114-7].

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页码：1085 / 1089

页数：5

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