Blue-purplish InGaN quantum wells with shallow depth of exciton localization

被引：22

作者：

Akasaka, T ^{[1
]}

Gotoh, H ^{[1
]}

Nakano, H ^{[1
]}

Makimoto, T ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Lab, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

关键词：

D O I：

10.1063/1.1925314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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