Effect of indium doping on the transient optical properties of GaN films

被引：37

作者：

Kumano, H ^{[1
]}

Hoshi, K

Tanaka, S

Suemune, I

Shen, XQ

Riblet, P

Ramvall, P

Aoyagi, Y

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

[2] Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films. (C) 1999 American Institute of Physics. [S0003-6951(99)00345-9].

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页码：2879 / 2881

页数：3

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