Noise performance of InGaAs-InP quantum-well infrared photodetectors

被引：25

作者：

Jelen, C ^{[1
]}

Slivken, S

David, T

Razeghi, M

Brown, GJ

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[2] USAF, Wright Lab, MLPO, Mat Directorate, Wright Patterson AFB, OH 45433 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 07期

关键词：

infrared detectors; noise; noise measurement; photodetectors; quantum-well devices;

D O I：

10.1109/3.687853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dark current noise measurements were carried out between 10 and 10(4) Hz at T = 80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIP's) designed for 8-mu m infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (similar to 7 x 10(22) cm(-3) s(-1)) is similar to AlGaAs-GaAs QWIP's with similar peak wavelengths, but the gain is 50x larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.

引用

页码：1124 / 1128

页数：5

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