Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection

被引：17

作者：

Jelen, C ^{[1
]}

Slivken, S ^{[1
]}

Hoff, J ^{[1
]}

Razeghi, M ^{[1
]}

Brown, GJ ^{[1
]}

机构：

[1] WRIGHT LAB,MAT DIRECTORATE,MLPO,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.118390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate quantum well infrared photodetectors based on a GaAs/Ga0.51In0.49P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Angstrom resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 mu m with a cutoff wavelength of 13.5, 15, and 15.5 mu m, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples. (C) 1997 American Institute of Physics.

引用

页码：360 / 362

页数：3

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