GAAS/GAINP MULTIQUANTUM WELL LONG-WAVELENGTH INFRARED DETECTOR USING BOUND-TO-CONTINUUM STATE ABSORPTION

被引：32

作者：

GUNAPALA, SD

LEVINE, BF

LOGAN, RA

TANBUNEK, T

HUMPHREY, DA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期

关键词：

D O I：

10.1063/1.104027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an 8 μm superlattice infrared detector which utilizes bound-to-continuum state intersubband absorption in lattice-matched GaAs/Ga 0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.

引用

页码：1802 / 1804

页数：3

共 23 条

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