Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

被引:25
作者
Jiang, ZM [1 ]
Zhu, HJ
Lu, F
Qin, J
Huang, DM
Wang, X
Hu, CW
Chen, YF
Zhu, ZQ
Yao, T
机构
[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi, Japan
基金
中国国家自然科学基金;
关键词
quantum dots; three-dimensional islanding growth; molecular beam epitaxy;
D O I
10.1016/S0040-6090(98)00444-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Under proper and critical growth conditions, very uniform Ge islands could be formed on Si(100) by using molecular beam epitaxy. The atomic force microscopic and cross-sectional transmission electron microscopic observations illustrate that the size and height uniformities of the islands are about +/-3%. The Auger electron spectroscopic measurements show that the wetting layer is converted into a SiGe alloy layer due to its intermixing with the substrate during the growth. A very narrow peak with the full width at half maximum (FWHM) of 1.6 meV at the energy of 0.767 eV is observed at the temperature of 16 K. We attribute this peak to the free exciton longitudinal acoustic (LA) phonon replica originated from the Ge islands. As the temperature increases, this narrow peak splits into a doublet. This 'camel-like' peak is temporarily explained as the exciton-polariton luminescence. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:60 / 64
页数:5
相关论文
共 17 条
[1]   Growth and characterization of self-assembled Ge-rich islands on Si [J].
Abstreiter, G ;
Schittenhelm, P ;
Engel, C ;
Silveira, E ;
Zrenner, A ;
Meertens, D ;
Jager, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1521-1528
[2]   PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].
APETZ, R ;
VESCAN, L ;
HARTMANN, A ;
DIEKER, C ;
LUTH, H .
APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447
[3]   POLARITON LUMINESCENCE AND ADDITIONAL BOUNDARY-CONDITIONS - COMPARISON BETWEEN THEORY AND EXPERIMENT [J].
ASKARY, F ;
YU, PY .
SOLID STATE COMMUNICATIONS, 1983, 47 (04) :241-246
[4]   Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots [J].
Bottani, CE ;
Mantini, C ;
Milani, P ;
Manfredini, M ;
Stella, A ;
Tognini, P ;
Cheyssac, P ;
Kofman, R .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2409-2411
[5]   STUDY OF THE 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION IN METALORGANIC VAPOR-PHASE EPITAXY OF GAINP/INP QUANTUM-SIZED STRUCTURES [J].
CARLSSON, N ;
SEIFERT, W ;
PETERSSON, A ;
CASTRILLO, P ;
PISTOL, ME ;
SAMUELSON, L .
APPLIED PHYSICS LETTERS, 1994, 65 (24) :3093-3095
[6]   RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].
HATAMI, F ;
LEDENTSOV, NN ;
GRUNDMANN, M ;
BOHRER, J ;
HEINRICHSDORFF, F ;
BEER, M ;
BIMBERG, D ;
RUVIMOV, SS ;
WERNER, P ;
GOSELE, U ;
HEYDENREICH, J ;
RICHTER, U ;
IVANOV, SV ;
MELTSER, BY ;
KOPEV, PS ;
ALFEROV, ZI .
APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658
[7]   NANOSCALE INP ISLANDS EMBEDDED IN INGAP [J].
KURTENBACH, A ;
EBERL, K ;
SHITARA, T .
APPLIED PHYSICS LETTERS, 1995, 66 (03) :361-363
[8]   DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
REAVES, CM ;
DENBAARS, SP ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205
[9]   PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].
MARZIN, JY ;
GERARD, JM ;
IZRAEL, A ;
BARRIER, D ;
BASTARD, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719
[10]   SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].
MOISON, JM ;
HOUZAY, F ;
BARTHE, F ;
LEPRINCE, L ;
ANDRE, E ;
VATEL, O .
APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198