The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers

被引：7

作者：

Ballet, P

Disseix, P ^{[1
]}

Leymarie, J

Vasson, A

Vasson, AM

Grey, R

机构：

[1] CNRS, UMR 6602, LASMEA, F-63177 Aubiere, France

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

THIN SOLID FILMS | 1998年 / 336卷 / 1-2期

关键词：

thermally-detected optical absorption; multiple quantum wells; (In; Ga)As/GaAs layers;

D O I：

10.1016/S0040-6090(98)01253-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strained layer (111)B-grown In0.15Ga0.85As/GaAs p-i-n quantum well structures have been investigated by thermally-detected optical absorption and modulation spectroscopy in order to determine the piezoelectric constant in the (In,Ga)As layers, The impact of both indium segregation and temperature is shown to be great on this determination. We show that those two phenomena may account for the discrepancy between the values reported in the literature and that expected from a linear interpolation between the piezoelectric constants of the two binaries InAs and GaAs. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：354 / 357

页数：4

共 13 条

[1] TEMPERATURE-DEPENDENT POLARIZATION IN [111] INXGA1-XAS-ALXGA1-XAS QUANTUM-WELLS [J].

BAHDER, TB ;

TOBER, RL ;

BRUNO, JD .

PHYSICAL REVIEW B, 1994, 50 (04) :2731-2734

[2] Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells [J].

Ballet, P ;

Disseix, P ;

Leymarie, J ;

Vasson, A ;

Vasson, AM ;

Grey, R .

PHYSICAL REVIEW B, 1997, 56 (23) :15202-15210

[3] Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy [J].

Chan, CH ;

Chen, MC ;

Lin, HH ;

Chen, YF ;

Jan, GJ ;

Chen, YH .

APPLIED PHYSICS LETTERS, 1998, 72 (10) :1208-1210

[4] Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells [J].

Disseix, P ;

Leymarie, J ;

Vasson, A ;

Vasson, AM ;

Monier, C ;

Grandjean, N ;

Leroux, M ;

Massies, J .

PHYSICAL REVIEW B, 1997, 55 (04) :2406-2412

[5] Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices [J].

Grey, R ;

David, JPR ;

Hill, G ;

Pabla, AS ;

Pate, MA ;

Rees, GJ ;

Robson, PN ;

RodriguezGirones, PJ ;

Sale, TE ;

Woodhead, J ;

Fisher, TA ;

Hogg, RA ;

Mowbray, DJ ;

Skolnick, MS ;

Whittaker, DM ;

Willcox, ARK .

MICROELECTRONICS JOURNAL, 1995, 26 (08) :811-820

[6] PIEZOELECTRIC-FIELD EFFECTS ON TRANSITION ENERGIES, OSCILLATOR-STRENGTHS, AND LEVEL WIDTHS IN (111)B-GROWN (IN,GA)AS/GAAS MULTIPLE-QUANTUM WELLS [J].

HOGG, RA ;

FISHER, TA ;

WILLCOX, ARK ;

WHITTAKER, DM ;

SKOLNICK, MS ;

MOWBRAY, DJ ;

DAVID, JPR ;

PABLA, AS ;

REES, GJ ;

GREY, R ;

WOODHEAD, J ;

SANCHEZROJAS, JL ;

HILL, G ;

PATE, MA ;

ROBSON, PN .

PHYSICAL REVIEW B, 1993, 48 (11) :8491-8494

[7]

NAGLE J, 1998, APPL PHYS LETT, V127, P1208

[8] TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS [J].

PABLA, AS ;

SANCHEZROJAS, JL ;

WOODHEAD, J ;

GREY, R ;

DAVID, JPR ;

REES, GJ ;

HILL, G ;

PATE, MA ;

ROBSON, PN ;

HOGG, RA ;

FISHER, TA ;

WILLCOX, ARK ;

WHITTAKER, DM ;

SKOLNICK, MS ;

MOWBRAY, DJ .

APPLIED PHYSICS LETTERS, 1993, 63 (06) :752-754

[9] DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS/GAAS STRAINED HETEROSTRUCTURES [J].

SANCHEZROJAS, JL ;

SACEDON, A ;

GONZALEZSANZ, F ;

CALLEJA, E ;

MUNOZ, E .

APPLIED PHYSICS LETTERS, 1994, 65 (16) :2042-2044

[10] PHOTOREFLECTANCE MODULATION MECHANISMS IN GAAS-ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].

SHANABROOK, BV ;

GLEMBOCKI, OJ ;

BEARD, WT .

PHYSICAL REVIEW B, 1987, 35 (05) :2540-2543

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