Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction

被引：35

作者：

Deshmukh, NV ^{[1
]}

Bhave, TM

Ethiraj, AS

Sainkar, SR

Ganesan, V

Bhoraskar, SV

Kulkarni, SK

机构：

[1] Univ Pune, Dept Phys, Pune 411007, Maharashtra, India

[2] Natl Chem Lab, Pune 411008, Maharashtra, India

[3] Inter Univ Consortium DAE Facilities, Indore 452017, India

来源：

NANOTECHNOLOGY | 2001年 / 12卷 / 03期

关键词：

D O I：

10.1088/0957-4484/12/3/316

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Chemically capped CdS nanoparticles are embedded in porous silicon (PS) by a dip coating method. Atomic force microscopy measurements reveal that the PS surface is covered with CdS nanoparticles forming well-defined rectangular blocks of nearly uniform size (200 x 200 nm(2)). Photoelectron spectroscopy and energy dispersive x-ray analysis confirm the presence of CdS in PS. Optical and electrical properties of the heterojunctions so-formed are investigated. Junction characteristics show that the composite so-formed exhibits very high forward current density (145 mA cm(-2)) and high reverse breakdown voltage (15 V).

引用

页码：290 / 294

页数：5

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