High-quality quantum point contacts in GaN/AlGaN heterostructures -: art. no. 073108

被引：34

作者：

Chou, HT ^{[1
]}

Lüscher, S

Goldhaber-Gordon, D

Manfra, MJ

Sergent, AM

West, KW

Molnar, RJ

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[4] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.1862339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the transport properties of quantum point contacts in a GaN/AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of "0.7 structure" which has been mainly investigated in the GaAs system. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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