Nonparabolicity of the conduction band of wurtzite GaN

被引:34
作者
Syed, S [1 ]
Heroux, JB
Wang, YJ
Manfra, MJ
Molnar, RJ
Stormer, HL
机构
[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
[4] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[5] MIT, Lincoln Lab, Lexington, MA 02420 USA
[6] Columbia Univ, Dept Phys, New York, NY 10027 USA
[7] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1630369
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using cyclotron resonance, we measure the effective mass, m(*), of electrons in AlGaN/GaN heterostructures with densities, n(2D)similar to1 to 6x10(12) cm(-2). From our extensive data, we extrapolate a band edge mass of (0.208+/-0.002)m(e). By comparing our m(*) data with the results of a multiband k.p calculation, we infer that the effect of remote bands is essential in explaining the observed conduction-band nonparabolicity (NP). Our calculation of polaron mass corrections-including finite width and two-dimensional (2D) screening-suggests those to be negligible. It implies that the behavior of m(*)(n(2D)) can be understood solely in terms of NP. Finally, using our NP and polaron corrections, we are able to reduce the large scatter in the published band edge mass values. (C) 2003 American Institute of Physics.
引用
收藏
页码:4553 / 4555
页数:3
相关论文
共 20 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   g values of effective mass donors in AlxGa1-xN alloys -: art. no. 165204 [J].
Bayerl, MW ;
Brandt, MS ;
Graf, T ;
Ambacher, O ;
Majewski, JA ;
Stutzmann, M ;
As, DJ ;
Lischka, K .
PHYSICAL REVIEW B, 2001, 63 (16)
[3]   ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN [J].
CARLOS, WE ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN .
PHYSICAL REVIEW B, 1993, 48 (24) :17878-17884
[4]   POLARON EFFECTIVE MASS IN GAAS HETEROSTRUCTURE [J].
DASSARMA, S .
PHYSICAL REVIEW B, 1983, 27 (04) :2590-2593
[5]   DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN [J].
DRECHSLER, M ;
HOFMANN, DM ;
MEYER, BK ;
DETCHPROHM, T ;
AMANO, H ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1178-L1179
[6]   Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction [J].
Hang, DR ;
Liang, CT ;
Huang, CF ;
Chang, YH ;
Chen, YF ;
Jiang, HX ;
Lin, JY .
APPLIED PHYSICS LETTERS, 2001, 79 (01) :66-68
[7]   K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].
HERMANN, C ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1977, 15 (02) :823-833
[8]  
KENNEDY TA, 1999, MRS INTERNET J NITRI
[9]   The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface [J].
Knap, W ;
Alause, H ;
Bluet, JM ;
Camassel, J ;
Young, J ;
Khan, MA ;
Chen, Q ;
Huant, S ;
Shur, M .
SOLID STATE COMMUNICATIONS, 1996, 99 (03) :195-199
[10]   Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface [J].
Knap, W ;
Contreras, S ;
Alause, H ;
Skierbiszewski, C ;
Camassel, J ;
Dyakonov, M ;
Robert, JL ;
Yang, J ;
Chen, Q ;
Khan, MA ;
Sadowski, ML ;
Huant, S ;
Yang, FH ;
Goiran, M ;
Leotin, J ;
Shur, MS .
APPLIED PHYSICS LETTERS, 1997, 70 (16) :2123-2125