Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride

被引：169

作者：

Quhe, Ruge ^{[1
,2
,3
]}

Zheng, Jiaxin ^{[1
,2
,3
]}

Luo, Guangfu ^{[1
,2
,4
]}

Liu, Qihang ^{[1
,2
]}

Qin, Rui ^{[1
,2
]}

Zhou, Jing ^{[1
,2
]}

Yu, Dapeng ^{[1
,2
]}

Nagase, Shigeru ^{[4
]}

Mei, Wai-Ning ^{[5
]}

Gao, Zhengxiang ^{[1
,2
]}

Lu, Jing ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China

[4] Inst Mol Sci, Dept Theoret & Computat Mol Sci, Okazaki, Aichi 444, Japan

[5] Univ Nebraska, Dept Phys, Omaha, NE 68182 USA

来源：

NPG ASIA MATERIALS | 2012年 / 4卷

基金：

美国国家科学基金会;

关键词：

density functional theory; electric field; graphene; h-BN sheet; quasiparticle correction; transport properties; AUGMENTED-WAVE METHOD; BILAYER GRAPHENE; TRANSISTORS; TRANSPORT; MOLECULES;

D O I：

10.1038/am.2012.10

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Opening a tunable and sizable band gap in single-layer graphene (SLG) without degrading its structural integrity and carrier mobility is a significant challenge. Using density functional theory calculations, we show that the band gap of SLG can be opened to 0.16 eV (without an electric field) and 0.34 eV (with a strong electric field) when properly sandwiched between two hexagonal boron nitride single layers. The zero-field band gaps are increased by more than 50% when the many-body effects are included. The ab initio quantum transport simulation of a dual-gated field effect transistor (FET) made of such a sandwich structure reveals an electric-field-enhanced transport gap, and the on/off current ratio is increased by a factor of 8.0 compared with that of a pure SLG FET. The tunable and sizeable band gap and structural integrity render this sandwich structure a promising candidate for high-performance SLG FETs. NPG Asia Materials (2012) 4, e6; doi:10.1038/am. 2012.10; published online 17 February 2012

引用

页码：e6 / e6

页数：10

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