3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

被引:70
作者
Bescond, M [1 ]
Nehari, K [1 ]
Autran, JL [1 ]
Cavassilas, N [1 ]
Munteanu, D [1 ]
Lannoo, M [1 ]
机构
[1] CNRS, UMR 6137, Lab Mat & Microelect Provence, F-13384 Marseille 20, France
来源
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年
关键词
D O I
10.1109/IEDM.2004.1419237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their "equivalent gate number" and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the Non-Equilibrium Green's Function formalism.
引用
收藏
页码:617 / 620
页数:4
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