3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

被引：70

作者：

Bescond, M ^{[1
]}

Nehari, K ^{[1
]}

Autran, JL ^{[1
]}

Cavassilas, N ^{[1
]}

Munteanu, D ^{[1
]}

Lannoo, M ^{[1
]}

机构：

[1] CNRS, UMR 6137, Lab Mat & Microelect Provence, F-13384 Marseille 20, France

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their "equivalent gate number" and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the Non-Equilibrium Green's Function formalism.

引用

页码：617 / 620

页数：4

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