Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots

被引：40

作者：

Epstein, RJ ^{[1
]}

Fuchs, DT

Schoenfeld, WV

Petroff, PM

Awschalom, DD

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.1344565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer. (C) 2001 American Institute of Physics.

引用

页码：733 / 735

页数：3

共 10 条

[1] Electron spin and optical coherence in semiconductors [J].