Influence of current density on transport numbers in anodic oxide films on an anodized Al-5.7at.%W alloy

被引：13

作者：

Iglesias-Rubianes, L

Skeldon, P

Thompson, GE

Habazaki, H

Shimizu, K

机构：

[1] UMIST, Corros & Protect Ctr, Manchester M60 1QD, Lancs, England

[2] Hokkaido Univ, Grad Engn Sch, Kita Ku, Sapporo, Hokkaido 0608628, Japan

[3] Keio Univ, Chem Lab, Yokohama, Kanagawa 223, Japan

来源：

CORROSION SCIENCE | 2003年 / 45卷 / 12期

关键词：

aluminium; anodizing; alloy; tungsten; ionic transport; marker;

D O I：

10.1016/S0010-938X(03)00116-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ionic transport numbers in barrier anodic films, formed on an Al-5.7at.%W alloy in 0.1 M sodium tungstate electrolyte at 293 K, have been measured for current densities from 0.1 to 1000 mA cm(-2). For this purpose, a xenon marker was ion implanted with a fluence of 1.5 x 10(15) ions cm(-2) into a film formed to 10 V on the alloy, which was then further anodized to 150 V. The position of the marker layer in the final film was determined by transmission electron microscopy and Rutherford backscattering spectroscopy. The cation transport number was similar to0.38, with no dependence upon current density to an accuracy of similar to10%. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2905 / 2913

页数：9

共 15 条

[1] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].