Mechanisms of electrical isolation in O+-irradiated ZnO

被引：48

作者：

Zubiaga, A. ^{[1
]}

Tuomisto, F. ^{[1
]}

Coleman, V. A. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

Koike, K. ^{[3
]}

Sasa, S. ^{[3
]}

Inoue, M. ^{[3
]}

Yano, M. ^{[3
]}

机构：

[1] Aalto Univ, Dept Engn Phys, Espoo 02015, Finland

[2] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

[3] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.78.035125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm(-1) when the ion fluence is at most 10(15) cm(-2) and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.

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页数：5

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