Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

被引：63

作者：

Borseth, Thomas Moe ^{[1
]}

Tuomisto, Filip ^{[2
]}

Christensen, Jens S. ^{[1
]}

Monakhov, Edouard V. ^{[1
]}

Svensson, Bengt G. ^{[1
]}

Kuznetsov, Andrej Yu. ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, Ctr Mat Sci & Nanotechnol, N-0318 Oslo, Norway

[2] Aalto Univ, Phys Lab, Espoo 02015, Finland

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.77.045204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using doses in the low 10(15) cm(-2) range induces small and big vacancy clusters containing at least 2 and 3-4 Zn vacancies, respectively. The small clusters are present already in as-implanted samples and remain stable up to 1000 degrees C with no significant effect on the resistivity evolution. In contrast, formation of the big clusters at 600 degrees C is associated with a significant increase in the free electron concentration attributed to gettering of amphoteric Li impurities by these clusters. Further annealing at 800 degrees C results in a dramatic decrease in the free electron concentration correlated with activation of 10(16)-10(17) cm(-3) acceptors likely to be N and/or Li related. The samples remain n type, however, and further annealing at 1000 degrees C results in passivation of the acceptor states while the big clusters dissociate.

引用

页数：6

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