Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films

被引：32

作者：

Chen, L. L.

Ye, Z. Z. ^{[1
]}

Lu, J. G.

Chu, Paul K.

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2405858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnO thin films have been fabricated by In and N codoping. The carrier type in the In-N codoped ZnO can be controlled by adjusting the growth conditions and good p-type conductivity is obtained at temperatures between 490 and 580 degrees C. The p-type behavior is improved when a buffer layer is used. The lowest reliable room temperature resistivity is found to be 7.85 Omega cm in the presence of a buffer layer. The ZnO-based homostructural p-n junctions comprising a n-ZnO: In layer on a p-ZnO: (In,N) layer on a buffer layer display apparent electrical rectification in the authors' repeated measurements. (c) 2006 American Institute of Physics.

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