Modified epitaxy in Co/S/GaAs(001) and comparison with Co/GaAs(001)

被引：8

作者：

Nath, KG ^{[1
]}

Maeda, F ^{[1
]}

Suzuki, S ^{[1
]}

Watanabe, Y ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期

关键词：

D O I：

10.1063/1.1379351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the S passivation, a modified growth of Co on GaAs(001) has been found. Using reflection high-energy electron diffraction and transmission electron microscopy, we observed the formation of a hcp Co overlayer of approximately 5 nm thickness on S/GaAs(001). In contrast, a similar 5 nm Co film on GaAs(001) shows a bcc structure. The metal-semiconductor interfaces in both systems were found to be different, where Co/S/GaAs(001) showed a relatively more abrupt interface. This epitaxial modification is explained on the basis of the morphology of the initial substrate surface, chemical compositions, the nature of the chemical reaction between adatoms and substrate atoms, and the effect of atomic segregation. (C) 2001 American Institute of Physics.

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页码：1222 / 1226

页数：5

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