Epitaxy, modification of electronic structures, overlayer-substrate reaction and segregation in ferromagnetic Co films on Se-treated GaAs(001) surface

被引：7

作者：

Nath, KG ^{[1
]}

Maeda, F ^{[1
]}

Suzuki, S ^{[1
]}

Watanabe, Y ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期

关键词：

semiconductor-magnetic interface; synchrotron radiation; photoemission; intermixing; segregation; surfactant;

D O I：

10.1143/JJAP.39.4571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure and chemical states of the overlayer and substrate in epitaxially grown Co films on Se-treated GaAs(001) 2 x 1 are investigated by photoemission spectroscopy (PES) using synchrotron radiation. Adatom (Co)-substrate (Ga) intermixing is found at the initial stages of Co deposition. The intermixed layer is then buried and epitaxial growth is achieved following further deposition. During the intermixing, Se is floated over the surface of Co overlayers. A small amount of As-segregation is also observed in the thicker Co films.

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收藏

页码：4571 / 4574

页数：4

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