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- [1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326Brillson, L. J.
- [2] SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2)[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 6605 - 6611CHAMBERS, SAXU, FCHEN, HWVITOMIROV, IMANDERSON, SBWEAVER, JH
- [3] ANGLE-RESOLVED AUGER-ELECTRON EMISSION FROM LAB6(001) WITH AND WITHOUT CHEMISORBED OXYGEN[J]. SURFACE SCIENCE, 1983, 131 (2-3) : 385 - 402CHAMBERS, SASWANSON, LW
- [4] MODELING OF INTERFACE REACTION-PRODUCTS WITH HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 907 - 910GRIONI, MDELGIUDICE, MJOYCE, JJWEAVER, JH
- [5] ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 962 - 968GRIONI, MJOYCE, JJWEAVER, JH
- [6] METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03): : 965 - 968GRIONI, MJOYCE, JJWEAVER, JH
- [7] REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110)[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 918 - 921GRIONI, MJOYCE, JJWEAVER, JH
- [8] INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES[J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3758 - 3765KENDELEWICZ, TWILLIAMS, MDPETRO, WGLINDAU, ISPICER, WE
- [9] FERMI ENERGY PINNING BEHAVIOR AND CHEMICAL-REACTIVITY OF THE PD/GAAS (110) INTERFACE[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 113 - 115KENDELEWICZ, TPETRO, WGPAN, SHWILLIAMS, MDLINDAU, ISPICER, WE
- [10] THE OXIDATION OF GAAS(110) - A REEVALUATION[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 351 - 358LANDGREN, GLUDEKE, RJUGNET, YMORAR, JFHIMPSEL, FJ