Thermal stability of NbN films deposited on GaAs substrates

Niobium nitride films were prepared on unheated GaAs substrates by de reactive magnetron sputtering from a niobium metal target in an Ar+N-2 mixed atmosphere. The nitrogen content in the gas mixture was varied from 2-20%, and the structural and electrical characteristics of the deposited thin NbN Schottky contacts to GaAs studied under high-temperature annealing (with annealing temperatures ranging from 850-950 degrees C). Using several characterisation methods, Auger analysis, Rutherford backscattering spectrometry analysis, and Schottky barrier measurement, it was found that the NbN/GaAs interface remained stable after rapid thermal annealing at 900 degrees C for 10 s for NbN films prepared with 2 and 5% N-2 in the gas mixture. (C) 1998 Elsevier Science Ltd. All rights reserved.