THERMAL-STABILITY AND BARRIER HEIGHT ENHANCEMENT FOR REFRACTORY-METAL NITRIDE CONTACTS ON GAAS

被引:31
作者
ZHANG, LC
CHEUNG, SK
LIANG, CL
CHEUNG, NW
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D O I
10.1063/1.98169
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O59 [应用物理学];
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页码:445 / 447
页数:3
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[2]   TITANIUM NITRIDE SCHOTTKY-BARRIER CONTACTS TO GAAS [J].
WALDROP, JR .
APPLIED PHYSICS LETTERS, 1983, 43 (01) :87-89
[3]  
Wu X.-N., UNPUB
[4]   CHARACTERISTICS OF WN/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF SPUTTERING [J].
YAMAGISHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12) :L895-L898