TITANIUM NITRIDE SCHOTTKY-BARRIER CONTACTS TO GAAS

被引：27

作者：

WALDROP, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：87 / 89

页数：3

共 13 条

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WALDROP, JR ;

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[7]

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[8]

Tseng W. F., 1982, International Electron Devices Meeting. Technical Digest, P174

[9] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].

WALDROP, JR ;

GRANT, RW .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :630-632

[10] INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS [J].

WALDROP, JR .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :350-352

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