Sub-100 nm focused ion beam lithography using ladder silicone spin-on glass

被引：8

作者：

Suzuki, K

Yamashita, M

Kawakami, N

Yoshikawa, A

Nakaue, A

机构：

[1] Electronics Research Laboratory, Kobe Steel, Ltd., Nishi-ku, Kobe, Hyogo 651-22, 1-5-5, Takatsukadai

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Focused ion beam lithography using ladder silicone spin-on glass (LS-SOG) as a negative-tone resist was investigated. The use of 200 keV Be2+ ion and tetramethylammoniumhydroxide developer resulted an in 80-nm-width line pattern with a vertical profile. The pattern collapse during the development was avoided by the use of fluorocarbon-based solvent. The development mechanism of LS-SOG was investigated by using nuclear magnetic resonance and gel permeation chromatography analysis. (C) 1996 American Vacuum Society.

引用

页码：3916 / 3919

页数：4

共 5 条

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