High-temperature superconducting Josephson fluxon-antifluxon transistors

被引：13

作者：

Berkowitz, SJ ^{[1
]}

Zhang, YM ^{[1
]}

Mallison, WH ^{[1
]}

Char, K ^{[1
]}

Terzioglu, E ^{[1
]}

Beasley, MR ^{[1
]}

机构：

[1] STANFORD UNIV,GINZTON LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.118028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have realized the Josephson fluxon-antifluxon transistor (JFAT) in high temperature superconductivity using an asymmetric control line on top of either bicrystal junctions or Go-doped YBa2Cu3Ox superconductor-normal-superconductor (SNS) junctions. We have measured current gains as high as 6 for 30 mu m-wide bicrystal JFATs (30 K) and as high as 3 for Go-doped SNS JFATs (50 K). An improvement in gain over the Josephson vortex flow transistor, due to improved coupling efficiency, is demonstrated. There is also a reduction of control line inductance that should lead to an improvement in gate speed. (C) 1996 American Institute of Physics.

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页码：3257 / 3259

页数：3

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