Overcoming limitations in semiconductor alloy design

被引：30

作者：

Mascarenhas, A ^{[1
]}

Zhang, Y ^{[1
]}

Verley, J ^{[1
]}

Seong, MJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2001年 / 29卷 / 06期

关键词：

isoelectronic impurity; co-doping; GaAs : N : Bi; GaP : N : Bi;

D O I：

10.1006/spmi.2001.0984

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The phenomenon of giant band gap 'bowing' recently observed in several III-V dilute nitride alloys is promising for increasing the flexibility in choice of semiconductor band gaps available for specified lattice constants. However, the poor electrical transport properties that these materials exhibit seriously limit their usefulness. It is proposed that these materials behave as heavily nitrogen-doped semiconductors rather than dilute nitride alloys and that the abnormal or irregular alloy behavior is associated with impurity band formation that manifests itself in the giant bowing and poor transport properties. The potential for regularizing the alloy behavior using isoelectronic co-doping is discussed. (C) 2001 Academic Press.

引用

页码：395 / 404

页数：10

共 43 条

[41] Scaling of band-gap reduction in heavily nitrogen doped GaAs [J].