Formation of an impurity band and its quantum confinement in heavily doped GaAs:N

被引：125

作者：

Zhang, Y ^{[1
]}

Mascarenhas, A

Xin, HP

Tu, CW

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.61.7479

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quantum confinement in GaAs1-xNx/GaAs quantum wells (0.009<x<0.045) is studied using electroreflectance measurements. Formation of an impurity band due to heavy nitrogen doping and the quantum confinement of an electron belonging to such an impurity band have been demonstrated. The formation of an impurity band results in an unusual variation in the electron effective mass with nitrogen doping.

引用

页码：7479 / 7482

页数：4

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