Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

被引：74

作者：

Linder, KK ^{[1
]}

Phillips, J

Qasaimeh, O

Liu, XF

Krishna, S

Bhattacharya, P

Jiang, JC

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report growth of self-organized In0.4Ga0.6 As quantum dots on Si substrates by molecular- beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6 As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6 As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that I-th = 3.85 kA/cm(2). The lasing spectral output has a peak emission wavelength of 1.013 mm and a linewidth (full width at half maximum) of similar to 4 Angstrom at the threshold. (C) 1999 American Institute of Physics. [S0003-6951(99)02010-0].

引用

页码：1355 / 1357

页数：3

共 12 条

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[2] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319

[3] GAAS-BASED DIODE-LASERS ON SI WITH INCREASED LIFETIME OBTAINED BY USING STRAINED INGAAS ACTIVE LAYER [J].

CHOI, HK ;

WANG, CA ;

KARAM, NH .

APPLIED PHYSICS LETTERS, 1991, 59 (21) :2634-2635

[4] EFFECTS OF DISLOCATION AND STRESS ON CHARACTERISTICS OF GAAS-BASED LASER GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

EGAWA, T ;

HASEGAWA, Y ;

JIMBO, T ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03) :791-797

[5]

EGAWA T, 1996, P 1996 IEEE INT EL D, P1208

[6] ACHIEVEMENTS AND LIMITATIONS IN OPTIMIZED GAAS FILMS GROWN ON SI BY MOLECULAR-BEAM EPITAXY [J].

GEORGAKILAS, A ;

PANAYOTATOS, P ;

STOEMENOS, J ;

MOURRAIN, JL ;

CHRISTOU, A .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2679-2701

[7] InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si [J].

Gerard, JM ;

Cabrol, O ;

Sermage, B .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3123-3125

[8] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[9]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[10] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

← 1 2 →